SK Hynix Debuts the World’s First CTF-Based 4D NAND Flash

First to 4D

SK Hynix Inc just launched the world’s first 96-Layer 512Gb CTF based 4D NAND Flash. This is based on their TLC arrays using 4D Charge Trap Flash (CTF) design paired with Peri Under Cell (PUC) technology. The combination of both is the first time it has ever been done in the industry according to SK Hynix. Although there has been previous efforts integrating 3D Floating Gate with PUC.

The 4D NAND chip reduces more than 30% of chip size. Furthermore, it increases bit productivity per wafer by 49% compared to the Company’s 72-Layer 512Gb 3D NAND. Additionally, the product has 30% higher write and 25% higher read performance. Also, its data bandwidth is doubled to the industry’s biggest 64KB.

With the introduction of a multiple gate insulators architecture, its data IO  speed reaches 1,200Mbps at 1.2V of operation power.

When Can We See 4D NAND Products?

SK Hynix will start the early stage of mass production of the 96-Layer 4D NAND within this year. A single 512Gb NAND Flash chip can represent 64GB (Gigabytes) storage. They are also going to be introducing 1TB (Terabyte) client SSDs using custom controllers and firmware within 2018. This will be followed by enterprise SSDs in 2H 2019.

Aside from SSDs, the company also intends to respond to the high density mobile market with the introduction of UFS (Universal Flash Storage) 3.0 in 1H 2019.

“This 96-Layer CTF-based 4D NAND, with the industry’s top cost competitiveness and performance, will become a milestone in the Company’s NAND Flash business, as a platform in developing future products,” said vice president J.T. Kim, the Head of NAND Marketing. “The Company plans to start the early stage mass production of it within this year and further expand the production in M15 to actively respond to a variety of clients,”