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Samsung introduce new CPU, LPDDR3, CMOS sensor and NAND solutions



/ 5 years ago

At the eighth annual Samsung Mobile Solutions Forum held this week Samsung introduced their range of “smart and green” products particularly their line in mobile solutions took to the forefront of the presentations:

  • a 32 nanometer (nm) dual-core application processor, Exynos 4212
  • an ultra high-speed LPDDR3 memory
  • advanced CMOS image sensor solutions, including
    • a 1/8.2-inch 1.2 Megapixel (Mp) imager
    • a 1/2.3-inch 16Mp high-sensitivity imager
  • a 20nm-class high-performance eMMC embedded NAND solution

The dual-core Exynos 4212 processor offers the best in-class performance built around Samsungs low-power consumption advanced 32nm High-K Metal Gate (HKMG), offering a 25% increase in processing power, the new processor features an enhanced graphics processing unit (GPU) that is capable of delivering 50 percent higher 3D graphics performance over the previous processor generation from Samsung, and advanced codec accelerators that support digital still images, video recording and play-back at 1080p full-HD resolution, an image signal processor and an on-chip HDMI 1.4 interface.

The LPDDR3 memory uses 30 nanometer technology for use in mobile devices such as smart-phones and tablets, the new 4GB modules run approximately 1.5 times faster than current LPDDR2 at up to 1,600 mbps, by stacking two 4Gb chips, Samsung is enabling use of a single 1GB LPDDR3 package, with a data transmission rate up to 12.8GB per second.

Samsung’s S5K2P1 is also optimised for mobile devices supporting a 16:9 video format of up to 8.3Mp resolution at 60fps and a maximum 16Mp at 30fps (frames per second), and is aimed at smart-phones, tablets and digital still camera’s.

And finally they introduced the 20nm embedded memory with 64Gb NAND for smart-phones, tablets and other mobile devices, It processes random write commands at 400 input/output operations per second (IOPS), and features sequential read speeds of up to 80 megabytes per second (MB/s) and sequential write speeds of 40MB/s.