Samsung Officially Announces GDDR7 Memory Development 32 Gbps Speeds

Samsung has today announced that it has completed the development of the next-generation GDDR7 DRAM to be installed in next-generation systems for verification next year.

Samsung GDDR7

The new 16 Gigabit GDDR7 is the next advancement in technology that will deliver the highest GDDR speeds yet with 32 Gbps speed per pin and a bandwidth of 1.5 TBps, 1.4x that of GDDR6 at 1.1 TBps. These advancements are made possible by the Pulse Amplitude Modulation (PAM3) signalling method instead of the Non-Return to Zero (NRZ) from the previous generations. Again compared to GDDR6, this new design is 20% more energy efficient with power-saving design technology optimized for high-speed operations. For laptops, this power-saving technology will be especially helpful. Despite lower power consumption, heat is still something to be concerned about and to minimize this, Samsung has used an epoxy moulding compound with high thermal conductivity for the packaging material. Compared to GDDR6, these improvements reduce thermal resistance by 70% aiding in stable long-term performance.

We should be expecting GDDR7 with the next generation RTX 50 series and AMD RX 8000 cards providing much higher memory performance for both.

What Samsung Had To Say

“Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphics performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles,” said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. “The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space.”